Cu, Ni, Pt ,Au etc metallization on diamond substrate TCB DPC AMB
DIASEMI provides advanced Cu, Ni, Pt, Au, and multilayer metallization solutions on diamond substrates, enabling reliable electrical, thermal, and mechanical interfaces for next-generation power and RF devices. Our metallization platforms are engineered for TCB (Thermal Compression Bonding), DPC (Direct Plated Copper), and AMB (Active Metal Brazing) integration, supporting high-temperature operation, low electrical resistance, and strong diamond adhesion. By combining optimized surface preparation, adhesion/barrier layers, and precision metal deposition, DIASEMI enables robust diamond-to-device and diamond-to-package interconnects for high-power semiconductors, RF electronics, and advanced thermal-management architectures.
