DIASEMI CVD Diamond Heatspeader General Specification

Category	Parameter	Electronic Device Packaging	High-Power Laser Packaging
Thermal Performance	Thermal Conductivity	≥1000 W/(m·K)	≥1200 W/(m·K); premium 1500–1800
	CTE	~1.0 ppm/K	~1.0 ppm/K
	Thermal Diffusivity	High	Extremely critical
Electrical	Volume Resistivity	≥1×10^12 Ω·m	≥1×10^12 Ω·m
	Dielectric Strength	High insulation	High insulation
Surface	Surface Roughness (Ra)	Grade1 ≤1 nm; Grade2 1–10 nm; Grade3 10–30 nm	Typically ≤2–5 nm; Wafer bonding ≤1 nm
	Surface Defects	No scratches/pits/cracks	Optical-grade surface
Dimensions	Thickness Tolerance	±0.01 mm	±0.01 mm
	Length/Diameter Tolerance	±0.05 mm	±0.05 mm
	TTV	≤5 μm	≤5 μm (often tighter)
	Flatness	≤5 μm	≤5 μm
	Bow/Warp	≤4 μm/cm; 2in<10 μm	≤4 μm/cm; 2in<10 μm
	Edge Chamfer	≤0.1 mm	≤0.1 mm
Metallization	Ti	0.10±0.02 μm	0.10±0.02 μm
	Cu	75±10 μm	75±10 μm
	Ni	≥1 μm	≥1 μm
	Au	≥0.5 μm	≥0.5 μm
	AuSn	Optional	5±1 μm; Au:Sn=75:25 ±5 wt%
Qualification	Adhesion	3M610 tape; no peeling	Same
	Die Shear	>2.5 N	>2.5 N
	Wire Bond Pull	>0.18 N	>0.18 N
Reliability	High Temp	350°C 5 min	Same
	85/85	85°C/85%RH/72 h	Same
	Temp Cycling	-55~150°C 1000 cycles	Same
	HTOL	125–150°C/1000 h	Usually required
Standards	JEDEC	JESD22	JESD22
	AEC	AEC-Q101 (optional)	Occasionally
	MIL	Application dependent	Frequently
	Telcordia	Optional	GR-468 common
Applications	Typical	GaN, SiC, RF, AI, LEDs	LD, VCSEL, Fiber, DPSS, PIC